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| MIG200Q2CSB1X MITSUBISHI SEMICONDUCTOR MIG200Q2CSB1X (1200V/200A 2in1) High Power Switching Applications Motor Control Applications * * * * * Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. The electrodes are isolated from case. VCE (sat) = 2.2 V (typ.) UL recognized File No. E87989 Weight: 278 g (typ.) Equivalent Circuit 1 2 3 4 5 6 7 8 FO GND IN VD FO GND IN VD GND VS OUT GND VS OUT E2 C2/E1 C1 1. 5. FO (L) FO (H) 2. 6. GND (L) GND (H) 3. 7. IN (L) IN (H) 4. 8. VD (L) VD (H) 2005-04-01 1/10 MIG200Q2CSB1X Package Dimensions Unit: mm 1. 7. FO (L) IN (H) 2. 8. GND (L) VD (H) 3. IN (L) 4. VD (L) 5. FO (H) 6. GND (H) 2005-04-01 2/10 MIG200Q2CSB1X Signal Terminal Layout Unit: mm 1. 7. FO (L) IN (H) 2. 8. GND (L) VD (H) 3. IN (L) 4. VD (L) 5. FO (H) 6. GND (H) 2005-04-01 3/10 MIG200Q2CSB1X Maximum Ratings (Tj = 25C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal/mounting) AC 1 minute M5 FO-GND (L) terminal FO sink current Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO Ratings 900 1200 200 200 2010 150 20 20 20 14 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V N*m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V, IC = 200 A, VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min VCC = 600 V, IC = 200 A, VD = 15 V, VIN = 15 V 0 V, Tj = 25C, Inductive load (Note 1) Typ. 2.2 2.4 2.0 0.3 0.3 1.5 0.3 Max 1 10 2.6 V 3.0 2.8 3.0 2.5 s V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 200 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart. 2005-04-01 4/10 MIG200Q2CSB1X 2. Control Stage (Tj = 25C) Characteristic Control circuit current Input-on signal voltage Input-off signal voltage Protection Fault output current Normal Over current protection trip level Short-circuit current protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT Case temperature OTr UV UVr tFO VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Test Condition Min 1.4 2.2 8 320 320 110 11.0 12.0 1 Typ. 13 13 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 17 1.8 2.8 12 mA 0.1 125 12.5 V 13.0 3 ms C A A s V V Unit mA 3. Thermal Resistance (Tc = 25C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.017 Max 0.062 0.136 C/W Unit C/W 2005-04-01 5/10 MIG200Q2CSB1X Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 68 F GND VS C1 GND E1/C2 VCC VD IF = 16 mA PG 15 V 68 F GND 0.1 F 15 k OUT IN VS E2 GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 2005-04-01 6/10 MIG200Q2CSB1X 4. Recommended conditions for application Characteristic Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 13.5 5 Typ. 600 15 Max 800 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2005-04-01 7/10 MIG200Q2CSB1X IC - VCE 400 VD = 17 V 400 IC - VCE VD = 15 V (A) 300 (A) VD = 15 V VD = 13 V 300 VD = 17 V Collector current IC 200 Collector current IC VD = 13 V 200 100 Common emitter Tj = 25C 0 0 1 2 3 4 5 100 Common emitter Tj = 125C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 10 Switching time - IC Switching time (s) 1 tc (off) tc (on) 0.1 Tj = 25C VCC = 600 V VD = 15 V L-LOAD 0.01 0 50 100 150 200 250 Switching time (s) ton toff ton toff 1 tc (off) tc (on) 0.1 Tj = 125C VCC = 600 V VD = 15 V L-LOAD 0.01 0 50 100 150 200 250 Collector current IC (A) Collector current IC (A) IF - V F 400 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10 nS) Common cathode 5 3 : Tj = 25C : Tj = 125C (A) 300 Forward current IF Irr 10 trr 200 5 3 100 Common cathode : Tj = 25C : Tj = 125C 0 0 1 2 3 4 5 1 0 50 100 150 200 250 Forward voltage VF (V) Forward current IF (A) 2005-04-01 8/10 MIG200Q2CSB1X OC - Tc ID (H) (mA) 600 50 ID (H) - fc Over current protection trip level OC (A) 500 40 400 High side control circuit current 30 300 20 200 100 VD = 15 V 0 0 25 50 75 100 125 150 10 VD = 15 V 0 0 5 10 15 20 25 Case temperature Tc (C) Carrier frequency fc (kHz) ID (L) - fc 50 400 Reverse bias SOA Low side control circuit current ID (L) (mA) OC 30 Collector current IC (A) 40 320 240 20 160 10 VD = 15 V 0 0 5 10 15 20 25 80 Tj < 125C = VD = 15V 0 0 200 400 600 800 1000 1200 1400 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw 1 TC = 25C Transient thermal resistance Rth (t)/(C/W) Diode stage 0.1 Inverter stage 0.01 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 2005-04-01 9/10 MIG200Q2CSB1X Turn on loss - IC 100 100 Turn off loss - IC 50 50 Eon (mJ) Turn on loss 5 3 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 50 100 150 200 250 Turn off loss 10 Eoff (mJ) 30 30 10 5 3 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 50 100 150 200 250 1 0 1 0 Collector current IC (A) Collector current IC (A) 2005-04-01 10/10 |
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